Clinical Proteomics:Article Title: Recapitulating Solid Stress on Tumor on a Chip for Nanomedicine Diffusive Transport Prediction
Article Snippet: Advanced NanoBiomed Research published by Wiley-VCH GmbH nloaded from https://onlinelibrary.w iley.com /doi/10.1002/anbr.202200164 by C ochrane Israel, W iley O nline L ibrary on [23/06/2023]. .. See the T erm s and C onditions (https://onlinelibrary.w iley.com /term s-and-conditions) on W iley O nline L ibrary for rules of use; O A articles are governed by the applicable C reative C om m ons L icense For this, 3 00 silicon wafers (Test grade, University Wafers) were first cleaned by oxygen plasma (150mLmin 1) for 5min at 400W (Tepla 600, PVA TePla AG). ..
Article Title: Fabrication of plasmonic structures with well-controlled nanometric features: a comparison between lift-off and ion beam etching.
Article Snippet: .. For lift-off the steps are—see figure 1(b): (1)the surface of the glass substrate is cleaned and activated with oxygen plasma at 200 W for 5 min (PVA Tepla GIGAbatch); (2)the sample is pre-baked on a hotplate (Prazitherm) for 5 min at 180 °C in order to remove residuals of loosely bound water; (3)after cooling down to room temperature for 1 min, a bilayer of methylmethacrylate (MMA, 8.5 EL6, 100 Da, Microresist Technology GmbH) of 120 nm and polymethylmethacrylate (PMMA, A2, 950 kDa, Microresist Technology GmbH) of 60 nm is spun coated onto the sample (ATMsse OPTIspin SB20), after each layer the sample is baked on a hotplate (Prazitherm) for 5 min at 180 °C, above the glass transition temperature, in order to evaporate the solvent from the resist, solidify the polymer and evacuate air bubbles; (4)a 20 nm layer of Cr is evaporated onto the sample in order to compensate the lack of substrate conductivity during the e-beam exposure and to provide a reflecting reference for the interferometric height inspection; (5)the sample is exposed to the e-beam of 100 keV electron energy with the doses of 600–900 μC cm−2; (6)after the exposure, the sacrificial Cr layer is etched in a fresh mixture of cerium ammonium nitride and perchloric acid (10.9%:4.25%:84:85% water, TechniETCH Cr01 MicroChemicals), normally 1 min is sufficient to totally remove the Cr layer although a longer time up to 5 min does not seem to damage the resist; (7)the sample is developed in 1:3 methyl isobutyl ketone:isopropanol (MIBK:IPA) for 1 min with rotational movement in order to avoid diffusion limited removal and to ensure total removal of the exposed resist, afterwards the sample is rinsed in IPA for 30 s to wash away the developer and finally dried with a gentle nitrogen flow; (8)in order to remove the resist residuals in the developed regions and to activate the surface, the sample is treated with a soft oxygen plasma at 120W for 8 s (Oxford PRS900); (9)a bilayer of Cr (1 nm) and Au (40 nm) is deposited onto the sample using an e-beam evaporator (Leybold Optics LAB 600). (10)The lift-off process is performed in an acetone bath and typically lasts overnight or, depending on the nanostructures sizes and density, even longer. ..
Article Title: Fabrication of plasmonic structures with well-controlled nanometric features: a comparison between lift-off and ion beam etching.
Article Snippet: .. For ion beam etching—also called dry etching—the steps are as follows, see figure 1(a): (1) the glass substrate is cleaned with oxygen plasma at 200 W for 5 min (PVA Tepla GIGAbatch); (2)a bilayer of Cr (1 nm) and Au (40 nm) is deposited using e-beam evaporation (Leybold Optics, LAB 600); (3)the sample is cleaned in a solution of tetramethyl ammonium hydroxide (MF-CD-26) for 30 s, then rinsed in distilled (DI) water until the resistivity is higher than 12MΩ, and dried with a nitrogen gun; (4)the sample is baked on a hotplate (Prazitherm) for 5 min at 180 °C in order to remove residuals of loosely bound water; (5)to etch a 40 nm of Au, a 40 nm layer of hydrogen silsesquioxane (HSQ, DuPont) is spun coated onto the sample (no post baking is required); (6)the sample is exposed to the e-beam of 100 keV electron energy with the doses of 1600–4000 μC cm−2; (7)right after the exposure, the sample is developed in MF-CD-26 (Rhom and Haas Electronic Materials LLC) for 1 min with gentle rotation of the petri dish, followed by rinsing in DI water and drying with a nitrogen gun; (8)the sample is exposed to low-energy argon ion beam in an ion beam etcher (IBE, Veeco Nexus IBE 350) for a total of 25 s etching time in successive cycles of 5 s followed by 30 s of temperature equalization, with the current perpendicular to the sample; the etching is finished by a last step of 5 s where the sample has a 5° inclination with respect to the current to decrease the effect of material redeposition on the sides of the structure. ..
Article Title: Recapitulating Solid Stress on Tumor on a Chip for Nanomedicine Diffusive Transport Prediction
Article Snippet: .. To make the final devices, sealing of the PDMS with a thin microscope cover glass (VWR, ECN 631-1574) was done by after activating the surfaces with oxygen plasma (O2 rate of 150mLmin 1 during 1min at 50W) (Tepla 600, PVA TePla AG). .. The siliconmaster mold, IPS and PDMS copies were imaged by scanning electron microscopy (SEM) (Zeiss Sigma Vp FE-SEM) operating at 1.5 keV and an aperture of 7 μm.
Article Title: Energetics and Kinetics of Membrane Permeation of Photoresists for Bioprinting
Article Snippet: .. Afterward, the surfaces of clean 24 mm × 60 mm glass slides and the fabricated PDMS rectangles were plasma activated for 35 s with oxygen plasma at 0.4 mbar and 200 W (PVA TePla AG), pressed together for 15 s and placed in a 65 °C oven overnight. ..
Article Title: A DNA turbine powered by a transmembrane potential across a nanopore
Article Snippet: The pattern is developed in a mixture of methyl-isobutyl-ketone and isopropanol with a ratio of 1:3 for 1 min, then stopped in isopropanol for 30 s. The exposed substrates were then etched using reactive-ion etching with fluoroform and argon (200 s, 50 W, 50 sccm of CHF 3 , 25 sccm of Ar, 10 μbar, SENTECH SI 200 plasma system). .. Finally, the resist was removed in oxygen plasma for 1 min (200 cm 3 min −1 O 2 , 100 W, PVA TePla 300) followed by an acetone bath for 5 min. ..
Evaporation:
Article Title: Fabrication of plasmonic structures with well-controlled nanometric features: a comparison between lift-off and ion beam etching.
Article Snippet: .. For ion beam etching—also called dry etching—the steps are as follows, see figure 1(a): (1) the glass substrate is cleaned with oxygen plasma at 200 W for 5 min (PVA Tepla GIGAbatch); (2)a bilayer of Cr (1 nm) and Au (40 nm) is deposited using e-beam evaporation (Leybold Optics, LAB 600); (3)the sample is cleaned in a solution of tetramethyl ammonium hydroxide (MF-CD-26) for 30 s, then rinsed in distilled (DI) water until the resistivity is higher than 12MΩ, and dried with a nitrogen gun; (4)the sample is baked on a hotplate (Prazitherm) for 5 min at 180 °C in order to remove residuals of loosely bound water; (5)to etch a 40 nm of Au, a 40 nm layer of hydrogen silsesquioxane (HSQ, DuPont) is spun coated onto the sample (no post baking is required); (6)the sample is exposed to the e-beam of 100 keV electron energy with the doses of 1600–4000 μC cm−2; (7)right after the exposure, the sample is developed in MF-CD-26 (Rhom and Haas Electronic Materials LLC) for 1 min with gentle rotation of the petri dish, followed by rinsing in DI water and drying with a nitrogen gun; (8)the sample is exposed to low-energy argon ion beam in an ion beam etcher (IBE, Veeco Nexus IBE 350) for a total of 25 s etching time in successive cycles of 5 s followed by 30 s of temperature equalization, with the current perpendicular to the sample; the etching is finished by a last step of 5 s where the sample has a 5° inclination with respect to the current to decrease the effect of material redeposition on the sides of the structure. ..
Solvent:Article Title: Fabrication of plasmonic structures with well-controlled nanometric features: a comparison between lift-off and ion beam etching.
Article Snippet: .. For lift-off the steps are—see figure 1(b): (1)the surface of the glass substrate is cleaned and activated with oxygen plasma at 200 W for 5 min (PVA Tepla GIGAbatch); (2)the sample is pre-baked on a hotplate (Prazitherm) for 5 min at 180 °C in order to remove residuals of loosely bound water; (3)after cooling down to room temperature for 1 min, a bilayer of methylmethacrylate (MMA, 8.5 EL6, 100 Da, Microresist Technology GmbH) of 120 nm and polymethylmethacrylate (PMMA, A2, 950 kDa, Microresist Technology GmbH) of 60 nm is spun coated onto the sample (ATMsse OPTIspin SB20), after each layer the sample is baked on a hotplate (Prazitherm) for 5 min at 180 °C, above the glass transition temperature, in order to evaporate the solvent from the resist, solidify the polymer and evacuate air bubbles; (4)a 20 nm layer of Cr is evaporated onto the sample in order to compensate the lack of substrate conductivity during the e-beam exposure and to provide a reflecting reference for the interferometric height inspection; (5)the sample is exposed to the e-beam of 100 keV electron energy with the doses of 600–900 μC cm−2; (6)after the exposure, the sacrificial Cr layer is etched in a fresh mixture of cerium ammonium nitride and perchloric acid (10.9%:4.25%:84:85% water, TechniETCH Cr01 MicroChemicals), normally 1 min is sufficient to totally remove the Cr layer although a longer time up to 5 min does not seem to damage the resist; (7)the sample is developed in 1:3 methyl isobutyl ketone:isopropanol (MIBK:IPA) for 1 min with rotational movement in order to avoid diffusion limited removal and to ensure total removal of the exposed resist, afterwards the sample is rinsed in IPA for 30 s to wash away the developer and finally dried with a gentle nitrogen flow; (8)in order to remove the resist residuals in the developed regions and to activate the surface, the sample is treated with a soft oxygen plasma at 120W for 8 s (Oxford PRS900); (9)a bilayer of Cr (1 nm) and Au (40 nm) is deposited onto the sample using an e-beam evaporator (Leybold Optics LAB 600). (10)The lift-off process is performed in an acetone bath and typically lasts overnight or, depending on the nanostructures sizes and density, even longer. ..
Polymer:Article Title: Fabrication of plasmonic structures with well-controlled nanometric features: a comparison between lift-off and ion beam etching.
Article Snippet: .. For lift-off the steps are—see figure 1(b): (1)the surface of the glass substrate is cleaned and activated with oxygen plasma at 200 W for 5 min (PVA Tepla GIGAbatch); (2)the sample is pre-baked on a hotplate (Prazitherm) for 5 min at 180 °C in order to remove residuals of loosely bound water; (3)after cooling down to room temperature for 1 min, a bilayer of methylmethacrylate (MMA, 8.5 EL6, 100 Da, Microresist Technology GmbH) of 120 nm and polymethylmethacrylate (PMMA, A2, 950 kDa, Microresist Technology GmbH) of 60 nm is spun coated onto the sample (ATMsse OPTIspin SB20), after each layer the sample is baked on a hotplate (Prazitherm) for 5 min at 180 °C, above the glass transition temperature, in order to evaporate the solvent from the resist, solidify the polymer and evacuate air bubbles; (4)a 20 nm layer of Cr is evaporated onto the sample in order to compensate the lack of substrate conductivity during the e-beam exposure and to provide a reflecting reference for the interferometric height inspection; (5)the sample is exposed to the e-beam of 100 keV electron energy with the doses of 600–900 μC cm−2; (6)after the exposure, the sacrificial Cr layer is etched in a fresh mixture of cerium ammonium nitride and perchloric acid (10.9%:4.25%:84:85% water, TechniETCH Cr01 MicroChemicals), normally 1 min is sufficient to totally remove the Cr layer although a longer time up to 5 min does not seem to damage the resist; (7)the sample is developed in 1:3 methyl isobutyl ketone:isopropanol (MIBK:IPA) for 1 min with rotational movement in order to avoid diffusion limited removal and to ensure total removal of the exposed resist, afterwards the sample is rinsed in IPA for 30 s to wash away the developer and finally dried with a gentle nitrogen flow; (8)in order to remove the resist residuals in the developed regions and to activate the surface, the sample is treated with a soft oxygen plasma at 120W for 8 s (Oxford PRS900); (9)a bilayer of Cr (1 nm) and Au (40 nm) is deposited onto the sample using an e-beam evaporator (Leybold Optics LAB 600). (10)The lift-off process is performed in an acetone bath and typically lasts overnight or, depending on the nanostructures sizes and density, even longer. ..
Diffusion-based Assay:Article Title: Fabrication of plasmonic structures with well-controlled nanometric features: a comparison between lift-off and ion beam etching.
Article Snippet: .. For lift-off the steps are—see figure 1(b): (1)the surface of the glass substrate is cleaned and activated with oxygen plasma at 200 W for 5 min (PVA Tepla GIGAbatch); (2)the sample is pre-baked on a hotplate (Prazitherm) for 5 min at 180 °C in order to remove residuals of loosely bound water; (3)after cooling down to room temperature for 1 min, a bilayer of methylmethacrylate (MMA, 8.5 EL6, 100 Da, Microresist Technology GmbH) of 120 nm and polymethylmethacrylate (PMMA, A2, 950 kDa, Microresist Technology GmbH) of 60 nm is spun coated onto the sample (ATMsse OPTIspin SB20), after each layer the sample is baked on a hotplate (Prazitherm) for 5 min at 180 °C, above the glass transition temperature, in order to evaporate the solvent from the resist, solidify the polymer and evacuate air bubbles; (4)a 20 nm layer of Cr is evaporated onto the sample in order to compensate the lack of substrate conductivity during the e-beam exposure and to provide a reflecting reference for the interferometric height inspection; (5)the sample is exposed to the e-beam of 100 keV electron energy with the doses of 600–900 μC cm−2; (6)after the exposure, the sacrificial Cr layer is etched in a fresh mixture of cerium ammonium nitride and perchloric acid (10.9%:4.25%:84:85% water, TechniETCH Cr01 MicroChemicals), normally 1 min is sufficient to totally remove the Cr layer although a longer time up to 5 min does not seem to damage the resist; (7)the sample is developed in 1:3 methyl isobutyl ketone:isopropanol (MIBK:IPA) for 1 min with rotational movement in order to avoid diffusion limited removal and to ensure total removal of the exposed resist, afterwards the sample is rinsed in IPA for 30 s to wash away the developer and finally dried with a gentle nitrogen flow; (8)in order to remove the resist residuals in the developed regions and to activate the surface, the sample is treated with a soft oxygen plasma at 120W for 8 s (Oxford PRS900); (9)a bilayer of Cr (1 nm) and Au (40 nm) is deposited onto the sample using an e-beam evaporator (Leybold Optics LAB 600). (10)The lift-off process is performed in an acetone bath and typically lasts overnight or, depending on the nanostructures sizes and density, even longer. ..
Indirect Immunoperoxidase Assay:Article Title: Fabrication of plasmonic structures with well-controlled nanometric features: a comparison between lift-off and ion beam etching.
Article Snippet: .. For lift-off the steps are—see figure 1(b): (1)the surface of the glass substrate is cleaned and activated with oxygen plasma at 200 W for 5 min (PVA Tepla GIGAbatch); (2)the sample is pre-baked on a hotplate (Prazitherm) for 5 min at 180 °C in order to remove residuals of loosely bound water; (3)after cooling down to room temperature for 1 min, a bilayer of methylmethacrylate (MMA, 8.5 EL6, 100 Da, Microresist Technology GmbH) of 120 nm and polymethylmethacrylate (PMMA, A2, 950 kDa, Microresist Technology GmbH) of 60 nm is spun coated onto the sample (ATMsse OPTIspin SB20), after each layer the sample is baked on a hotplate (Prazitherm) for 5 min at 180 °C, above the glass transition temperature, in order to evaporate the solvent from the resist, solidify the polymer and evacuate air bubbles; (4)a 20 nm layer of Cr is evaporated onto the sample in order to compensate the lack of substrate conductivity during the e-beam exposure and to provide a reflecting reference for the interferometric height inspection; (5)the sample is exposed to the e-beam of 100 keV electron energy with the doses of 600–900 μC cm−2; (6)after the exposure, the sacrificial Cr layer is etched in a fresh mixture of cerium ammonium nitride and perchloric acid (10.9%:4.25%:84:85% water, TechniETCH Cr01 MicroChemicals), normally 1 min is sufficient to totally remove the Cr layer although a longer time up to 5 min does not seem to damage the resist; (7)the sample is developed in 1:3 methyl isobutyl ketone:isopropanol (MIBK:IPA) for 1 min with rotational movement in order to avoid diffusion limited removal and to ensure total removal of the exposed resist, afterwards the sample is rinsed in IPA for 30 s to wash away the developer and finally dried with a gentle nitrogen flow; (8)in order to remove the resist residuals in the developed regions and to activate the surface, the sample is treated with a soft oxygen plasma at 120W for 8 s (Oxford PRS900); (9)a bilayer of Cr (1 nm) and Au (40 nm) is deposited onto the sample using an e-beam evaporator (Leybold Optics LAB 600). (10)The lift-off process is performed in an acetone bath and typically lasts overnight or, depending on the nanostructures sizes and density, even longer. ..
Gentle:Article Title: Fabrication of plasmonic structures with well-controlled nanometric features: a comparison between lift-off and ion beam etching.
Article Snippet: .. For lift-off the steps are—see figure 1(b): (1)the surface of the glass substrate is cleaned and activated with oxygen plasma at 200 W for 5 min (PVA Tepla GIGAbatch); (2)the sample is pre-baked on a hotplate (Prazitherm) for 5 min at 180 °C in order to remove residuals of loosely bound water; (3)after cooling down to room temperature for 1 min, a bilayer of methylmethacrylate (MMA, 8.5 EL6, 100 Da, Microresist Technology GmbH) of 120 nm and polymethylmethacrylate (PMMA, A2, 950 kDa, Microresist Technology GmbH) of 60 nm is spun coated onto the sample (ATMsse OPTIspin SB20), after each layer the sample is baked on a hotplate (Prazitherm) for 5 min at 180 °C, above the glass transition temperature, in order to evaporate the solvent from the resist, solidify the polymer and evacuate air bubbles; (4)a 20 nm layer of Cr is evaporated onto the sample in order to compensate the lack of substrate conductivity during the e-beam exposure and to provide a reflecting reference for the interferometric height inspection; (5)the sample is exposed to the e-beam of 100 keV electron energy with the doses of 600–900 μC cm−2; (6)after the exposure, the sacrificial Cr layer is etched in a fresh mixture of cerium ammonium nitride and perchloric acid (10.9%:4.25%:84:85% water, TechniETCH Cr01 MicroChemicals), normally 1 min is sufficient to totally remove the Cr layer although a longer time up to 5 min does not seem to damage the resist; (7)the sample is developed in 1:3 methyl isobutyl ketone:isopropanol (MIBK:IPA) for 1 min with rotational movement in order to avoid diffusion limited removal and to ensure total removal of the exposed resist, afterwards the sample is rinsed in IPA for 30 s to wash away the developer and finally dried with a gentle nitrogen flow; (8)in order to remove the resist residuals in the developed regions and to activate the surface, the sample is treated with a soft oxygen plasma at 120W for 8 s (Oxford PRS900); (9)a bilayer of Cr (1 nm) and Au (40 nm) is deposited onto the sample using an e-beam evaporator (Leybold Optics LAB 600). (10)The lift-off process is performed in an acetone bath and typically lasts overnight or, depending on the nanostructures sizes and density, even longer. ..
Article Title: Fabrication of plasmonic structures with well-controlled nanometric features: a comparison between lift-off and ion beam etching.
Article Snippet: .. For ion beam etching—also called dry etching—the steps are as follows, see figure 1(a): (1) the glass substrate is cleaned with oxygen plasma at 200 W for 5 min (PVA Tepla GIGAbatch); (2)a bilayer of Cr (1 nm) and Au (40 nm) is deposited using e-beam evaporation (Leybold Optics, LAB 600); (3)the sample is cleaned in a solution of tetramethyl ammonium hydroxide (MF-CD-26) for 30 s, then rinsed in distilled (DI) water until the resistivity is higher than 12MΩ, and dried with a nitrogen gun; (4)the sample is baked on a hotplate (Prazitherm) for 5 min at 180 °C in order to remove residuals of loosely bound water; (5)to etch a 40 nm of Au, a 40 nm layer of hydrogen silsesquioxane (HSQ, DuPont) is spun coated onto the sample (no post baking is required); (6)the sample is exposed to the e-beam of 100 keV electron energy with the doses of 1600–4000 μC cm−2; (7)right after the exposure, the sample is developed in MF-CD-26 (Rhom and Haas Electronic Materials LLC) for 1 min with gentle rotation of the petri dish, followed by rinsing in DI water and drying with a nitrogen gun; (8)the sample is exposed to low-energy argon ion beam in an ion beam etcher (IBE, Veeco Nexus IBE 350) for a total of 25 s etching time in successive cycles of 5 s followed by 30 s of temperature equalization, with the current perpendicular to the sample; the etching is finished by a last step of 5 s where the sample has a 5° inclination with respect to the current to decrease the effect of material redeposition on the sides of the structure. ..
Microscopy:Article Title: Recapitulating Solid Stress on Tumor on a Chip for Nanomedicine Diffusive Transport Prediction
Article Snippet: .. To make the final devices, sealing of the PDMS with a thin microscope cover glass (VWR, ECN 631-1574) was done by after activating the surfaces with oxygen plasma (O2 rate of 150mLmin 1 during 1min at 50W) (Tepla 600, PVA TePla AG). .. The siliconmaster mold, IPS and PDMS copies were imaged by scanning electron microscopy (SEM) (Zeiss Sigma Vp FE-SEM) operating at 1.5 keV and an aperture of 7 μm.
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