uk, Search Results


micro mechanical loading stage  (Deben UK Ltd)
96
Deben UK Ltd micro mechanical loading stage
Micro Mechanical Loading Stage, supplied by Deben UK Ltd, used in various techniques. Bioz Stars score: 96/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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uk5099  (MedChemExpress)
95
MedChemExpress uk5099
Uk5099, supplied by MedChemExpress, used in various techniques. Bioz Stars score: 95/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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ebl  (Deben UK Ltd)
92
Deben UK Ltd ebl
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Ebl, supplied by Deben UK Ltd, used in various techniques. Bioz Stars score: 92/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/result/ebl/product/Deben UK Ltd
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ebl - by Bioz Stars, 2026-03
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fluconazole  (MedChemExpress)
93
MedChemExpress fluconazole
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Fluconazole, supplied by MedChemExpress, used in various techniques. Bioz Stars score: 93/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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Average 93 stars, based on 1 article reviews
fluconazole - by Bioz Stars, 2026-03
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torsion stages • stem bse detectors  (Deben UK Ltd)
93
Deben UK Ltd torsion stages • stem bse detectors
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Torsion Stages • Stem Bse Detectors, supplied by Deben UK Ltd, used in various techniques. Bioz Stars score: 93/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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torsion stages • stem bse detectors - by Bioz Stars, 2026-03
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tcs 2002 tocris  (Tocris)
93
Tocris tcs 2002 tocris
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Tcs 2002 Tocris, supplied by Tocris, used in various techniques. Bioz Stars score: 93/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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tcs 2002 tocris - by Bioz Stars, 2026-03
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detector  (Deben UK Ltd)
93
Deben UK Ltd detector
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Detector, supplied by Deben UK Ltd, used in various techniques. Bioz Stars score: 93/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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detector - by Bioz Stars, 2026-03
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uck2  (Proteintech)
93
Proteintech uck2
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Uck2, supplied by Proteintech, used in various techniques. Bioz Stars score: 93/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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uck2 - by Bioz Stars, 2026-03
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elective mmp 3 inhibitor uk 356618  (MedChemExpress)
93
MedChemExpress elective mmp 3 inhibitor uk 356618
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Elective Mmp 3 Inhibitor Uk 356618, supplied by MedChemExpress, used in various techniques. Bioz Stars score: 93/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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maraviroc 99  (MedChemExpress)
95
MedChemExpress maraviroc 99
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Maraviroc 99, supplied by MedChemExpress, used in various techniques. Bioz Stars score: 95/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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sildenafil  (MedChemExpress)
94
MedChemExpress sildenafil
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Sildenafil, supplied by MedChemExpress, used in various techniques. Bioz Stars score: 94/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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machine  (Deben UK Ltd)
94
Deben UK Ltd machine
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Machine, supplied by Deben UK Ltd, used in various techniques. Bioz Stars score: 94/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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machine - by Bioz Stars, 2026-03
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Image Search Results


Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically thin MoSe2 film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, EBL was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.

Journal: Nanoscale

Article Title: Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition.

doi: 10.1039/c4nr03817g

Figure Lengend Snippet: Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically thin MoSe2 film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, EBL was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.

Article Snippet: 17 MoSe2 devices fabrication and patterning were performed with EBL (JEOL JSM7001F equipped with Deben beam blanker and Nanometer Pattern Generation System) at 30 kV acceleration voltage.

Techniques: Solvent