mosfet Search Results


mosfet simulation  (COMSOL Inc)
90
COMSOL Inc mosfet simulation
Mosfet Simulation, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/mosfet/mosfet+simulation/pm40047587-100-2-17
Average 90 stars, based on 1 article reviews
mosfet simulation - by Bioz Stars, 2026-08
90/100 stars
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dual power trench mosfet modules vmm 1500-0075x2  (IXYS Corporation)
90
IXYS Corporation dual power trench mosfet modules vmm 1500-0075x2
Dual Power Trench Mosfet Modules Vmm 1500 0075x2, supplied by IXYS Corporation, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/mosfet/dual+power+trench+mosfet+modules+vmm+1500+0075x2/us08941264-91-9-22
Average 90 stars, based on 1 article reviews
dual power trench mosfet modules vmm 1500-0075x2 - by Bioz Stars, 2026-08
90/100 stars
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zener-protected supermeshtm power mosfet std1lnk60z-1  (STMicroelectronics Pte)
90
STMicroelectronics Pte zener-protected supermeshtm power mosfet std1lnk60z-1
Zener Protected Supermeshtm Power Mosfet Std1lnk60z 1, supplied by STMicroelectronics Pte, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/mosfet/zener+protected+supermeshtm+power+mosfet+std1lnk60z+1/us07755021-113-12-16
Average 90 stars, based on 1 article reviews
zener-protected supermeshtm power mosfet std1lnk60z-1 - by Bioz Stars, 2026-08
90/100 stars
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compact model for the drain current and node charges in symmetrical double-gate (dg) mosfet  (STMicroelectronics Pte)
90
STMicroelectronics Pte compact model for the drain current and node charges in symmetrical double-gate (dg) mosfet
Compact Model For The Drain Current And Node Charges In Symmetrical Double Gate (Dg) Mosfet, supplied by STMicroelectronics Pte, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/mosfet/compact+model+for+the+drain+current+and+node+charges+in+symmetrical+double+gate++dg++mosfet/10__1080_slash_08927020600930524-9-76-55
Average 90 stars, based on 1 article reviews
compact model for the drain current and node charges in symmetrical double-gate (dg) mosfet - by Bioz Stars, 2026-08
90/100 stars
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low-side ultrafast driver ixys #ixdn430  (IXYS Corporation)
90
IXYS Corporation low-side ultrafast driver ixys #ixdn430
Low Side Ultrafast Driver Ixys #Ixdn430, supplied by IXYS Corporation, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/mosfet/14+amp+low+side+ultrafast+mosfet+driver++type+ixdd414pi/us09960763-207-7-12
Average 90 stars, based on 1 article reviews
low-side ultrafast driver ixys #ixdn430 - by Bioz Stars, 2026-08
90/100 stars
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mosfets  (Verlag GmbH)
90
Verlag GmbH mosfets
Mosfets, supplied by Verlag GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/mosfet/mosfet/10__1002_slash_aelm__201700277-322-23-3
Average 90 stars, based on 1 article reviews
mosfets - by Bioz Stars, 2026-08
90/100 stars
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pa94 chip  (Apex Microtechnology)
90
Apex Microtechnology pa94 chip
Pa94 Chip, supplied by Apex Microtechnology, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/mosfet/mosfet+operational+amplifier+pa94/pmc05769088-143-17-15
Average 90 stars, based on 1 article reviews
pa94 chip - by Bioz Stars, 2026-08
90/100 stars
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mosfet std7nm50n  (STMicroelectronics Pte)
90
STMicroelectronics Pte mosfet std7nm50n
Mosfet Std7nm50n, supplied by STMicroelectronics Pte, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/mosfet/mosfet+std7nm50n/us09699836-175-3-6
Average 90 stars, based on 1 article reviews
mosfet std7nm50n - by Bioz Stars, 2026-08
90/100 stars
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std12nf06l-1 power mosfet  (STMicroelectronics Pte)
90
STMicroelectronics Pte std12nf06l-1 power mosfet
Std12nf06l 1 Power Mosfet, supplied by STMicroelectronics Pte, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/mosfet/std12nf06l+1+power+mosfet/us11883604-200-9-14
Average 90 stars, based on 1 article reviews
std12nf06l-1 power mosfet - by Bioz Stars, 2026-08
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mosfets stmicroelectronics model sty139n65m5  (STMicroelectronics Pte)
90
STMicroelectronics Pte mosfets stmicroelectronics model sty139n65m5
Mosfets Stmicroelectronics Model Sty139n65m5, supplied by STMicroelectronics Pte, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/mosfet/an+n+channel+power+mosfet+provided+under+the+trade+designation+and+or+part+number+sty139n65m5/us10910543-112-10-9
Average 90 stars, based on 1 article reviews
mosfets stmicroelectronics model sty139n65m5 - by Bioz Stars, 2026-08
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gan trench mosfet  (ROHM Co Ltd)
90
ROHM Co Ltd gan trench mosfet
<t>Vertical</t> <t>GaN</t> power devices include ( a ) GaN power rectifier, ( b ) GaN CAVET, ( c ) GaN planar <t>MOSFET,</t> and ( d ) GaN Trench MOSFET.
Gan Trench Mosfet, supplied by ROHM Co Ltd, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/mosfet/gan+trench+mosfet/pmc10609112-118-15-2
Average 90 stars, based on 1 article reviews
gan trench mosfet - by Bioz Stars, 2026-08
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sic mosfet  (IEEE Access)
90
IEEE Access sic mosfet
<t>Vertical</t> <t>GaN</t> power devices include ( a ) GaN power rectifier, ( b ) GaN CAVET, ( c ) GaN planar <t>MOSFET,</t> and ( d ) GaN Trench MOSFET.
Sic Mosfet, supplied by IEEE Access, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/mosfet/sic+mosfet/10__1109_slash_access__2021__3090956-252-28-30
Average 90 stars, based on 1 article reviews
sic mosfet - by Bioz Stars, 2026-08
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Image Search Results


Vertical GaN power devices include ( a ) GaN power rectifier, ( b ) GaN CAVET, ( c ) GaN planar MOSFET, and ( d ) GaN Trench MOSFET.

Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: Vertical GaN power devices include ( a ) GaN power rectifier, ( b ) GaN CAVET, ( c ) GaN planar MOSFET, and ( d ) GaN Trench MOSFET.

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques:

The comparison of PFOM for various vertical GaN MOSFET with a breakdown voltage of 1 kV and above [ , , , , , ].

Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: The comparison of PFOM for various vertical GaN MOSFET with a breakdown voltage of 1 kV and above [ , , , , , ].

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques: Comparison

( a ) Fin structure vertical GaN MOSFET and ( b ) in situ oxide–GaN interlayer FET (OG_FET).

Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: ( a ) Fin structure vertical GaN MOSFET and ( b ) in situ oxide–GaN interlayer FET (OG_FET).

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques: In Situ

GaN MOSFET with double field plate Reprinted with permission from Ref. . 2017, Dong Ji.

Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: GaN MOSFET with double field plate Reprinted with permission from Ref. . 2017, Dong Ji.

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques:

GaN MOSFET with field-limiting rings (FLRs). Reprinted with permission from Ref. . 2022, Kachi Tetsu and Narita Tetsuo.

Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: GaN MOSFET with field-limiting rings (FLRs). Reprinted with permission from Ref. . 2022, Kachi Tetsu and Narita Tetsuo.

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques:

Mesa edge termination of GaN MOSFET. Reprinted with permission from Ref. . 2019, Srabanti Chowdhury.

Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: Mesa edge termination of GaN MOSFET. Reprinted with permission from Ref. . 2019, Srabanti Chowdhury.

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques:

The schematic comparison of GaN vertical MOSFET with a breakdown voltage greater than 1 kV. Reprinted with permission from Refs. [ , , , , , ].

Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: The schematic comparison of GaN vertical MOSFET with a breakdown voltage greater than 1 kV. Reprinted with permission from Refs. [ , , , , , ].

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques: Comparison

The comparison of various vertical GaN transistors with a breakdown voltage greater than 1 kV.

Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: The comparison of various vertical GaN transistors with a breakdown voltage greater than 1 kV.

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques: Comparison

Benchmarking vertical GaN devices against lateral GaN MOSFET devices and vertical SiC devices. Adapted from Refs. [ , , , , , , , , , , , , , , , , , , , , , , , , , , ].

Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: Benchmarking vertical GaN devices against lateral GaN MOSFET devices and vertical SiC devices. Adapted from Refs. [ , , , , , , , , , , , , , , , , , , , , , , , , , , ].

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques: