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mems array-type piezoresistive pressure sensor employing soi wafer  (ANSYS inc)

 
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    Structured Review

    ANSYS inc mems array-type piezoresistive pressure sensor employing soi wafer
    Process flow of the proposed array-type <t>piezoresistive</t> pressure sensor (the drawing is not to scale). ( a ) the <t>silicon</t> <t>on</t> <t>insulator</t> <t>(SOI)</t> wafer cleaning process that removes contaminants was completed; ( b ) p -type ion implantation and annealing were performed on the front side of (100) SOI wafer; ( c ) The SOI wafer was placed in a high-temperature furnace for dry-oxygen thermal oxidation; ( d ) the piezoresistor and electrical contact hole patterns were achieved by a combination of lithography and ICP etching; ( e ) the aluminum electrode layer was formed by sputtering and was subsequently patterned to complete pads and electrodes; ( f ) after lithography and etching of the substrate silicon dioxide, the silicon cup was formed on the back side by tetramethylammonium hydroxide (TMAH); ( g ) the underlying silicon oxide on the back side was removed; ( h ) field-assisted silicon-glass bonding was carried out in a vacuum environment.
    Mems Array Type Piezoresistive Pressure Sensor Employing Soi Wafer, supplied by ANSYS inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/custom+pressure+sensor+array/mems+array+type+piezoresistive+pressure+sensor+employing+soi+wafer/pmc06187660-320-2-20
    Average 90 stars, based on 1 article reviews
    mems array-type piezoresistive pressure sensor employing soi wafer - by Bioz Stars, 2026-11
    90/100 stars

    Images

    1) Product Images from "Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System"

    Article Title: Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System

    Journal: Micromachines

    doi: 10.3390/mi9030104

    Process flow of the proposed array-type piezoresistive pressure sensor (the drawing is not to scale). ( a ) the silicon on insulator (SOI) wafer cleaning process that removes contaminants was completed; ( b ) p -type ion implantation and annealing were performed on the front side of (100) SOI wafer; ( c ) The SOI wafer was placed in a high-temperature furnace for dry-oxygen thermal oxidation; ( d ) the piezoresistor and electrical contact hole patterns were achieved by a combination of lithography and ICP etching; ( e ) the aluminum electrode layer was formed by sputtering and was subsequently patterned to complete pads and electrodes; ( f ) after lithography and etching of the substrate silicon dioxide, the silicon cup was formed on the back side by tetramethylammonium hydroxide (TMAH); ( g ) the underlying silicon oxide on the back side was removed; ( h ) field-assisted silicon-glass bonding was carried out in a vacuum environment.
    Figure Legend Snippet: Process flow of the proposed array-type piezoresistive pressure sensor (the drawing is not to scale). ( a ) the silicon on insulator (SOI) wafer cleaning process that removes contaminants was completed; ( b ) p -type ion implantation and annealing were performed on the front side of (100) SOI wafer; ( c ) The SOI wafer was placed in a high-temperature furnace for dry-oxygen thermal oxidation; ( d ) the piezoresistor and electrical contact hole patterns were achieved by a combination of lithography and ICP etching; ( e ) the aluminum electrode layer was formed by sputtering and was subsequently patterned to complete pads and electrodes; ( f ) after lithography and etching of the substrate silicon dioxide, the silicon cup was formed on the back side by tetramethylammonium hydroxide (TMAH); ( g ) the underlying silicon oxide on the back side was removed; ( h ) field-assisted silicon-glass bonding was carried out in a vacuum environment.

    Techniques Used:

    ( a ) Photograph of the pressure-welded array-type piezoresistive pressure sensor on the printed circuit board (PCB); ( b ) photograph of the packaged array-type piezoresistive pressure sensor.
    Figure Legend Snippet: ( a ) Photograph of the pressure-welded array-type piezoresistive pressure sensor on the printed circuit board (PCB); ( b ) photograph of the packaged array-type piezoresistive pressure sensor.

    Techniques Used:

    Pressure display interface of piezoresistive MEMS array-type pressure sensor system based on QT and embedded system.
    Figure Legend Snippet: Pressure display interface of piezoresistive MEMS array-type pressure sensor system based on QT and embedded system.

    Techniques Used:

    Related Articles

    other:

    Article Title: Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System
    Article Snippet: Specifically, the MEMS array-type piezoresistive pressure sensor employing SOI wafer for radiosonde measurements of pressure is proposed and optimized by ANSYS finite element method.



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